Infineon HEXFET N-Channel MOSFET, 60 A, 250 V, 3-Pin TO-220AB IRFB4332PBF

Bulk discount available

Subtotal (1 unit)*

£2.06

(exc. VAT)

£2.47

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,849 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£2.06
10 - 24£1.96
25 - 49£1.87
50 - 99£1.80
100 +£1.67

*price indicative

RS Stock No.:
495-562
Mfr. Part No.:
IRFB4332PBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

250 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.82mm

Typical Gate Charge @ Vgs

99 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Length

10.66mm

Height

9.02mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF


This MOSFET is tailored for high-performance applications in automation and electronics. Leveraging advanced HEXFET technology, it ensures optimal efficiency and reliability in critical environments. The device features robust specifications combined with a user-friendly design, making it suitable for a range of industrial applications. Its effective operation in rigorous conditions meets the requirements of modern electronic systems.

Features & Benefits


• N-channel configuration supports efficient current flow
• Continuous drain current rating of 60A facilitates strong performance
• High voltage capacity up to 250V enhances versatility
• Low on-resistance increases efficiency and minimises heat generation
• Enhancement mode operation improves stability for digital applications
• High power dissipation capability contributes to reliability under load

Applications


• Applied in energy recovery systems to boost efficiency
• Suitable for pass switch where space is limited
• Utilised in plasma display panels to enhance performance
• Ideal for automation controls demanding sustained high current

What is the temperature range for optimal operation?


The device operates effectively between -40°C and +175°C, allowing it to function in diverse environmental conditions.

How does the gate threshold voltage affect performance?


With a threshold voltage between 3V and 5V, it permits precise control in switching applications.

Can it handle high pulsed currents?


Yes, the design accommodates pulsed drain currents, allowing for 230A under specific conditions, which is advantageous for transient applications.

What are the thermal management requirements?


To maintain optimal performance, adequate cooling measures should be implemented, considering a maximum power dissipation of 390W.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links