Infineon HEXFET N-Channel MOSFET, 60 A, 250 V, 3-Pin TO-220AB IRFB4332PBF
- RS Stock No.:
- 495-562
- Mfr. Part No.:
- IRFB4332PBF
- Brand:
- Infineon
Subtotal (1 unit)*
£2.06
(exc. VAT)
£2.47
(inc. VAT)
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- 1,849 unit(s) ready to ship
Units | Per unit |
---|---|
1 - 9 | £2.06 |
10 - 24 | £1.96 |
25 - 49 | £1.87 |
50 - 99 | £1.80 |
100 + | £1.67 |
*price indicative
- RS Stock No.:
- 495-562
- Mfr. Part No.:
- IRFB4332PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 60 A | |
Maximum Drain Source Voltage | 250 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 33 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 390 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 4.82mm | |
Typical Gate Charge @ Vgs | 99 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 10.66mm | |
Height | 9.02mm | |
Minimum Operating Temperature | -40 °C | |
Forward Diode Voltage | 1.3V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 250 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 390 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.82mm | ||
Typical Gate Charge @ Vgs 99 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 10.66mm | ||
Height 9.02mm | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 1.3V | ||
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Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF
Features & Benefits
• Continuous drain current rating of 60A facilitates strong performance
• High voltage capacity up to 250V enhances versatility
• Low on-resistance increases efficiency and minimises heat generation
• Enhancement mode operation improves stability for digital applications
• High power dissipation capability contributes to reliability under load
Applications
• Suitable for pass switch where space is limited
• Utilised in plasma display panels to enhance performance
• Ideal for automation controls demanding sustained high current
What is the temperature range for optimal operation?
How does the gate threshold voltage affect performance?
Can it handle high pulsed currents?
What are the thermal management requirements?
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