Infineon HEXFET N-Channel MOSFET, 60 A, 250 V, 3-Pin TO-220AB IRFB4332PBF

RS Stock No.:: 124-8961
Mfr. Part No.:: IRFB4332PBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 60 A, 250 V, 3-Pin TO-220AB IRFB4332PBF

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Subtotal (1 tube of 50 units)*

£70.05

(exc. VAT)

£84.05

(inc. VAT)

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In Stock

1,800 unit(s) ready to ship

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Units	Per unit	Per Tube*
50 - 50	£1.401	£70.05
100 - 200	£1.331	£66.55
250 +	£1.303	£65.15

*price indicative

RS Stock No.:: 124-8961
Mfr. Part No.:: IRFB4332PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	60 A
	Maximum Drain Source Voltage	250 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	33 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	390 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	99 nC @ 10 V
	Length	10.66mm
	Width	4.82mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C
	Height	9.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 60 A
	Maximum Drain Source Voltage 250 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 33 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 390 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 99 nC @ 10 V
	Length 10.66mm
	Width 4.82mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C
	Height 9.02mm

COO (Country of Origin):: MX

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Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF

This MOSFET is tailored for high-performance applications in automation and electronics. Leveraging advanced HEXFET technology, it ensures optimal efficiency and reliability in critical environments. The device features robust specifications combined with a user-friendly design, making it suitable for a range of industrial applications. Its effective operation in rigorous conditions meets the requirements of modern electronic systems.

Features & Benefits

• N-channel configuration supports efficient current flow
• Continuous drain current rating of 60A facilitates strong performance
• High voltage capacity up to 250V enhances versatility
• Low on-resistance increases efficiency and minimises heat generation
• Enhancement mode operation improves stability for digital applications
• High power dissipation capability contributes to reliability under load

Applications

• Applied in energy recovery systems to boost efficiency
• Suitable for pass switch where space is limited
• Utilised in plasma display panels to enhance performance
• Ideal for automation controls demanding sustained high current

What is the temperature range for optimal operation?

The device operates effectively between -40°C and +175°C, allowing it to function in diverse environmental conditions.

How does the gate threshold voltage affect performance?

With a threshold voltage between 3V and 5V, it permits precise control in switching applications.

Can it handle high pulsed currents?

Yes, the design accommodates pulsed drain currents, allowing for 230A under specific conditions, which is advantageous for transient applications.

What are the thermal management requirements?

To maintain optimal performance, adequate cooling measures should be implemented, considering a maximum power dissipation of 390W.

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