Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 118 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS Stock No.:
- 427-760
- Mfr. Part No.:
- DM170S12TDRB
- Brand:
- Starpower
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£16.95
(exc. VAT)
£20.34
(inc. VAT)
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In Stock
- 11 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £16.95 |
| 10 - 99 | £15.25 |
| 100 + | £14.07 |
*price indicative
- RS Stock No.:
- 427-760
- Mfr. Part No.:
- DM170S12TDRB
- Brand:
- Starpower
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Channel Type | Single Switch | |
| Product Type | SiC Mosfet without Diode | |
| Maximum Continuous Drain Current Id | 118A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Tape & Reel | |
| Series | DOSEMI | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 29.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.6V | |
| Maximum Gate Source Voltage Vgs | 19V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 355W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Channel Type Single Switch | ||
Product Type SiC Mosfet without Diode | ||
Maximum Continuous Drain Current Id 118A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Tape & Reel | ||
Series DOSEMI | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 29.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.6V | ||
Maximum Gate Source Voltage Vgs 19V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 355W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Chip sintering technology
Low inductance case avoid oscillations
ROHS
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