STMicroelectronics STK615 Silicon N-Channel MOSFET, 672 A, 40 V, 4-Pin PowerLeaded 8x8 STK615N4F8AG
- RS Stock No.:
- 358-981
- Mfr. Part No.:
- STK615N4F8AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£2.70
(exc. VAT)
£3.24
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £2.70 |
| 10 - 99 | £2.43 |
| 100 - 499 | £2.24 |
| 500 - 999 | £2.08 |
| 1000 + | £1.69 |
*price indicative
- RS Stock No.:
- 358-981
- Mfr. Part No.:
- STK615N4F8AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 672 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PowerLeaded 8x8 | |
| Series | STK615 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 672 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerLeaded 8x8 | ||
Series STK615 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET is designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
AEC Q101 qualified
MSL1 grade
175 degree C maximum operating junction temperature
100 percent avalanche tested
MSL1 grade
175 degree C maximum operating junction temperature
100 percent avalanche tested
Related links
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 4-Pin SOT-223 IRFL024ZTRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 4-Pin SOT-223 IRFL024NTRPBF
- STMicroelectronics SuperMESH Silicon N-Channel MOSFET 600 V, 4-Pin SOT-223 STN1NK60Z
- STMicroelectronics Silicon N-Channel MOSFET 650 V, 4-Pin HiP247-4 SCTWA35N65G2V-4
- STMicroelectronics Silicon N-Channel MOSFET 1200 V, 4-Pin HiP247-4 SCTWA70N120G2V-4
- Vishay Dual Silicon N-Channel MOSFET 40 V, 4-Pin 8 x 8L SQJQ936EL-T1_GE3
- STMicroelectronics Dual Silicon N-Channel MOSFET 92 A, 4-Pin TO247-4 STW65N023M9-4
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R027M1HXKSA1
