STMicroelectronics N-Channel STK615 Type N-Channel MOSFET, 672 A, 40 V Enhancement, 4-Pin PowerLeaded STK615N4F8AG
- RS Stock No.:
- 358-981
- Mfr. Part No.:
- STK615N4F8AG
- Brand:
- STMicroelectronics
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£2.76
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£3.31
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- 300 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £2.76 |
| 10 - 99 | £2.48 |
| 100 - 499 | £2.29 |
| 500 - 999 | £2.13 |
| 1000 + | £1.73 |
*price indicative
- RS Stock No.:
- 358-981
- Mfr. Part No.:
- STK615N4F8AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Operating Frequency | 1 MHz | |
| Maximum Continuous Drain Current Id | 672A | |
| Output Power | 390W | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | STK615 | |
| Package Type | PowerLeaded | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | N-Channel | |
| Length | 8.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 8.15 mm | |
| Height | 1.85mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Operating Frequency 1 MHz | ||
Maximum Continuous Drain Current Id 672A | ||
Output Power 390W | ||
Maximum Drain Source Voltage Vds 40V | ||
Series STK615 | ||
Package Type PowerLeaded | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration N-Channel | ||
Length 8.15mm | ||
Standards/Approvals AEC-Q101 | ||
Width 8.15 mm | ||
Height 1.85mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET is designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
AEC Q101 qualified
MSL1 grade
175 degree C maximum operating junction temperature
100 percent avalanche tested
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