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Infineon F4-17MR12W1M1H_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HB76BPSA1

RS Stock No.:: 349-252
Mfr. Part No.:: F417MR12W1M1HB76BPSA1
Brand:: Infineon

Infineon F4-17MR12W1M1H_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HB76BPSA1

Subtotal (1 unit)*

£166.55

(exc. VAT)

£199.86

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

24 unit(s) ready to ship

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Units	Per unit
1 +	£166.55

*price indicative

RS Stock No.:: 349-252
Mfr. Part No.:: F417MR12W1M1HB76BPSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	1200V
	Series	F4-17MR12W1M1H_B76
	Package Type	EasyPACK
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	34.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	20mW
	Maximum Gate Source Voltage Vgs	23 V
	Forward Voltage Vf	5.35V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 60747, IEC 60068, IEC 61140, IEC 60749
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 1200V
	Series F4-17MR12W1M1H_B76
	Package Type EasyPACK
	Mount Type Screw
	Maximum Drain Source Resistance Rds 34.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 20mW
	Maximum Gate Source Voltage Vgs 23 V
	Forward Voltage Vf 5.35V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 60747, IEC 60068, IEC 61140, IEC 60749
	Automotive Standard No

Datasheet - F417MR12W1M1HB76BPSA1

COO (Country of Origin):: DE

The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC and PressFIT contact technology. This MOSFET is designed with best in class packaging, offering a compact 12 mm height for efficient space utilization. It leverages leading edge Wide Bandgap materials, providing enhanced power efficiency and performance. With very low module stray inductance, it minimizes power loss and improves switching dynamics.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density