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Infineon FF11MR12W2M1HP_B11 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HPB11BPSA1

RS Stock No.:: 348-976
Mfr. Part No.:: FF11MR12W2M1HPB11BPSA1
Brand:: Infineon

Infineon FF11MR12W2M1HP_B11 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HPB11BPSA1

Subtotal (1 unit)*

£157.43

(exc. VAT)

£188.92

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

18 unit(s) ready to ship

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Units	Per unit
1 +	£157.43

*price indicative

RS Stock No.:: 348-976
Mfr. Part No.:: FF11MR12W2M1HPB11BPSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	EasyPACK
	Series	FF11MR12W2M1HP_B11
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	23.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	5.35V
	Maximum Power Dissipation Pd	20mW
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 60747, IEC 60068, IEC 60749
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 1200V
	Package Type EasyPACK
	Series FF11MR12W2M1HP_B11
	Mount Type Screw
	Maximum Drain Source Resistance Rds 23.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 5.35V
	Maximum Power Dissipation Pd 20mW
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 60747, IEC 60068, IEC 60749
	Automotive Standard No

Datasheet - FF11MR12W2M1HPB11BPSA1

COO (Country of Origin):: DE

The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is engineered for high performance power applications, offering a best-in-class package with a compact 12 mm height. It leverages leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency and thermal performance. The module is designed with very low stray inductance, which minimizes power losses and improves switching speed.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density