Infineon FS13MR12W2M1H_C55 Type N-Channel MOSFET, 62.5 A, 1200 V Enhancement EasyPACK FS13MR12W2M1HC55BPSA1
- RS Stock No.:
- 348-979
- Mfr. Part No.:
- FS13MR12W2M1HC55BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£320.55
(exc. VAT)
£384.66
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 15 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £320.55 |
*price indicative
- RS Stock No.:
- 348-979
- Mfr. Part No.:
- FS13MR12W2M1HC55BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62.5A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | FS13MR12W2M1H_C55 | |
| Package Type | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 21.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62.5A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series FS13MR12W2M1H_C55 | ||
Package Type EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 21.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET 1200 V, 13 mΩ Six-Pack Module integrates CoolSiC MOSFET Enhanced Generation 1 technology for high performance power applications. Housed in a best-in-class package with a compact 12 mm height, it delivers optimal space efficiency without sacrificing performance. The module is built with leading-edge Wide Bandgap (WBG) materials, ensuring superior efficiency, thermal performance, and reliability.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Better thermal conductivity of DCB material
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