Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HPB76BPSA1
- RS Stock No.:
- 348-966
- Mfr. Part No.:
- F417MR12W1M1HPB76BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£177.68
(exc. VAT)
£213.22
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £177.68 |
*price indicative
- RS Stock No.:
- 348-966
- Mfr. Part No.:
- F417MR12W1M1HPB76BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | F4-17MR12W1M1HP_B76 | |
| Package Type | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series F4-17MR12W1M1HP_B76 | ||
Package Type EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material and PressFIT contact technology. This MOSFET is built with best-in-class packaging, featuring a compact 12 mm height for efficient integration. It utilizes leading edge Wide Bandgap materials, which enhance performance and energy efficiency. The design offers very low module stray inductance, reducing power losses and improving switching characteristics. Powered by the Enhanced CoolSiC MOSFET Gen 1, it provides superior thermal performance and reliability.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Related links
- Infineon N-Channel MOSFET BSL606SNH6327XTSA1
- Infineon N-Channel MOSFET FS13MR12W2M1HC55BPSA1
- Infineon N-Channel MOSFET F3L11MR12W2M1HPB19BPSA1
- Infineon N-Channel MOSFET FF11MR12W2M1HPB11BPSA1
- Infineon N-Channel MOSFET FF3MR12KM1HHPSA1
- Infineon N-Channel MOSFET F48MR12W2M1HB70BPSA1
- Infineon N-Channel MOSFET F417MR12W1M1HB76BPSA1
- Infineon N-Channel MOSFET, 40 V BSC076N04NDATMA1


