Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET, 63 A, 120 V, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1

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Packaging Options:
RS Stock No.:
285-050
Mfr. Part No.:
ISC104N12LM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

120 V

Package Type

PG-TDSON-8

Series

OptiMOS 6 Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET is a premier power transistor designed for high efficiency applications. With its advanced N channel logic level characteristics, it excels in providing very low on resistance, ensuring optimal energy savings during operation. The innovative SuperSO8 package enhances thermal management, making it ideally suited for high frequency switching tasks. This state of the art component boasts excellent gate charge performance, significantly reducing the losses typically encountered in less sophisticated devices. Additionally, its compliance with RoHS and halogen free regulations guarantees a commitment to environmentally friendly technology.

N channel technology for superior performance
Low on resistance reduces power loss
Designed for high frequency switching
Complies with industry standards for reliability
RoHS and halogen free for eco friendliness
Handles high avalanche energy for robustness
Optimised for synchronous rectification
Enhanced thermal characteristics for better heat dissipation

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