Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET, 63 A, 120 V, 8-Pin PG-TDSON-8 ISC104N12LM6ATMA1

The Infineon MOSFET is a premier power transistor designed for high efficiency applications. With its advanced N channel logic level characteristics, it excels in providing very low on resistance, ensuring optimal energy savings during operation. The innovative SuperSO8 package enhances thermal management, making it ideally suited for high frequency switching tasks. This state of the art component boasts excellent gate charge performance, significantly reducing the losses typically encountered in less sophisticated devices. Additionally, its compliance with RoHS and halogen free regulations guarantees a commitment to environmentally friendly technology.

N channel technology for superior performance
Low on resistance reduces power loss
Designed for high frequency switching
Complies with industry standards for reliability
RoHS and halogen free for eco friendliness
Handles high avalanche energy for robustness
Optimised for synchronous rectification
Enhanced thermal characteristics for better heat dissipation