Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 28 A, 650 V, 8-Pin PG-HSOF-8 IPT65R099CFD7XTMA1
- RS Stock No.:
- 284-909
- Mfr. Part No.:
- IPT65R099CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-909
- Mfr. Part No.:
- IPT65R099CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | 650V CoolMOS CFD7 SJ Power Device | |
| Package Type | PG-HSOF-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 650 V | ||
Series 650V CoolMOS CFD7 SJ Power Device | ||
Package Type PG-HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET features an advanced 650V CoolMOS CFD7 power device is designed for exceptional performance in resonant switching topologies, including LLC and phase shift full bridge applications. With a focus on improved efficiency and thermal behaviour, this product is an ideal solution for demanding applications such as servers, telecom systems, and EV charging. The inclusion of a fast body diode enhances reliability, particularly in fast switching scenarios. As an evolution of the well established CFD2 series, this innovative MOSFET leverages superior switching characteristics and offers enhanced robustness against hard commutation events. Its design not only meets but exceeds industry standards for efficiency and thermal performance, making it an invaluable component for high power density solutions.
Ultra fast body diode for high speed performance
Minimises switching loss for optimal energy use
Exceptional ruggedness for added safety
Optimised for industrial SMPS applications
Fully JEDEC qualified for industrial settings
Supports high power density for compact designs
Engineered for phase shift full bridge integration
Minimises switching loss for optimal energy use
Exceptional ruggedness for added safety
Optimised for industrial SMPS applications
Fully JEDEC qualified for industrial settings
Supports high power density for compact designs
Engineered for phase shift full bridge integration
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