Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 34 A, 650 V, 8-Pin PG-HSOF-8 IPT65R080CFD7XTMA1
- RS Stock No.:
- 284-906
- Mfr. Part No.:
- IPT65R080CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-906
- Mfr. Part No.:
- IPT65R080CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HSOF-8 | |
| Series | 650V CoolMOS CFD7 SJ Power Device | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HSOF-8 | ||
Series 650V CoolMOS CFD7 SJ Power Device | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET is a advanced power device represents a significant innovation in power management, showcasing exceptional efficiency and reliability in a compact footprint. Designed with cutting edge CoolMOS CFD7 technology, it effectively handles voltages up to 650V, making it ideal for demanding applications such as server power supplies, telecom infrastructure, and electric vehicle charging systems. Its unique ultra fast body diode ensures superior switching performance, enabling high efficiency in resonant switching topologies. By combining advanced thermal behaviour with minimal switching losses, this product is engineered to meet the stringent demands of modern power applications, driving system performance while optimising space.
Ultra fast body diode boosts switching
Minimal losses enhance system efficiency
High breakdown voltage for demanding tasks
Optimised for compact high power density
Excellent thermal performance under heavy load
Rugged design offers safety margin
Ideal for phase shift and LLC applications
Fully JEDEC qualified for industrial use
Minimal losses enhance system efficiency
High breakdown voltage for demanding tasks
Optimised for compact high power density
Excellent thermal performance under heavy load
Rugged design offers safety margin
Ideal for phase shift and LLC applications
Fully JEDEC qualified for industrial use
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