Infineon 650V CoolMOS SiC N-Channel MOSFET, 136 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R017CFD7XTMA1
- RS Stock No.:
- 284-869
- Mfr. Part No.:
- IPDQ65R017CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-869
- Mfr. Part No.:
- IPDQ65R017CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 136 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | 650V CoolMOS | |
| Package Type | PG-HDSOP-22 | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 136 A | ||
Maximum Drain Source Voltage 650 V | ||
Series 650V CoolMOS | ||
Package Type PG-HDSOP-22 | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET features a CoolMOS CFD7 series which is engineered for high efficiency in resonant switching applications. With a breakdown voltage of 650V, the product excels in thermal performance, making it an ideal choice for demanding environments such as server and telecom systems, EV charging, and solar applications. Its superior hard commutation capabilities and rapid switching attributes provide reliability and safety in critical applications. The device aims to enhance power density while ensuring exceptional performance in light load conditions. As such, it serves as a potent solution for contemporary energy efficient designs.
Ultra fast body diode boosts switching performance
Optimised for phase shift full bridge applications
High thermal robustness enhances overall efficiency
Flexible design with low RDS temperature dependency
Supports higher bus voltages for increased power density
Resilient against hard commutation for reliable operation
Fully qualified per JEDEC standards
Optimised for phase shift full bridge applications
High thermal robustness enhances overall efficiency
Flexible design with low RDS temperature dependency
Supports higher bus voltages for increased power density
Resilient against hard commutation for reliable operation
Fully qualified per JEDEC standards
Related links
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R017CFD7XTMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R080CFD7XTMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R029CFD7XTMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R099CFD7XTMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R040CFD7XTMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R125CFD7XTMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R060CFD7XTMA1
- Infineon 600V CoolMOS SiC N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R035CFD7XTMA1