Infineon OptiMOS SiC N-Channel MOSFET, 132 A, 60 V, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1

Subtotal (1 reel of 6000 units)*

£8,058.00

(exc. VAT)

£9,672.00

(inc. VAT)

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Units
Per unit
Per Reel*
6000 +£1.343£8,058.00

*price indicative

RS Stock No.:
284-759
Mfr. Part No.:
IQE030N06NM5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

60 V

Package Type

PG-WHSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an optimos 5 power transistor is designed to excel in synchronous rectification applications, offering unparalleled performance and efficiency. With a robust design and state of the art thermal management capabilities, this power MOSFET ensures reliable operation in demanding environments. Its superior thermal resistance makes it a prime choice for various industrial applications, ensuring that your systems operate with maximum reliability and minimal power loss. Fully compliant with RoHS regulations, this component prioritises eco friendliness while maintaining exceptional functionality.

High efficiency synchronous rectification
N channel configuration for effective performance
100% avalanche reliability tested
Halogen free materials for safer disposal
Wide industrial temperature range support
Minimal on state resistance reduces power loss
RoHS compliant for environmental sustainability

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