Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- RS Stock No.:
- 284-752
- Mfr. Part No.:
- IQE022N06LM5CGSCATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.31
(exc. VAT)
£11.17
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.862 | £9.31 |
| 50 - 95 | £1.768 | £8.84 |
| 100 - 495 | £1.638 | £8.19 |
| 500 - 995 | £1.508 | £7.54 |
| 1000 + | £1.452 | £7.26 |
*price indicative
- RS Stock No.:
- 284-752
- Mfr. Part No.:
- IQE022N06LM5CGSCATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-TSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-TSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a power transistor is engineered for high performance in switch mode power supplies, ensuring reliability across demanding applications. Designed within the OptiMOS 5 series, it delivers exceptional efficiency and low on resistance, making it an Ideal choice for synchronous rectification. With its Pb free and RoHS compliant construction, the product not only meets the latest environmental standards but also assures robust performance under varying conditions. This transistor features Advanced thermal management and is avalanche rated, ensuring safer operation and durability in critical settings. Its logic level drive capability allows for seamless integration into a wide range of electronic systems, further exemplifying its versatility and performance stability.
Optimised for high efficiency power conversion
Low on resistance for enhanced performance
Pb free design for environmental compliance
Avalanche tested for increased reliability
Logic level drive simplifies low voltage interfacing
Thermal resistance for efficient heat management
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