Infineon OptiMOS SiC N-Channel MOSFET, 314 A, 120 V, 8-Pin PG-HSOF-8-1 IAUTN12S5N017ATMA1

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Packaging Options:
RS Stock No.:
284-669
Mfr. Part No.:
IAUTN12S5N017ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

314 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS

Package Type

PG-HSOF-8-1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon OptiMOS 5 automotive power MOSFET is engineered for robust performance in demanding applications. Featuring the OptiMOS 5 technology, it excels in efficiency and reliability, making it an ideal choice for automotive power management solutions. Its N channel enhancement mode structure delivers high level functionality while adhering to rigorous industry standards. Designed to withstand extreme conditions, this power transistor ensures operability up to 175°C and features an extended qualification beyond AEC Q101.

Optimised for automotive compatibility
Enhanced testing ensures dependable performance
Robust design with advanced thermal management
MSL1 rating supports 260°C peak reflow
RoHS compliant for eco friendly initiatives
Avalanche testing confirms transient resilience

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