STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin H2PAK-7 SCT070H120G3-7

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Subtotal 10 units (supplied on a continuous strip)*

£111.40

(exc. VAT)

£133.70

(inc. VAT)

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10 - 99£11.14
100 +£10.28

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Packaging Options:
RS Stock No.:
214-961P
Mfr. Part No.:
SCT070H120G3-7
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

H2PAK-7

Series

SCT

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode