- RS Stock No.:
- 193-543
- Mfr. Part No.:
- IXFH69N30P
- Brand:
- IXYS
Price Each
£8.97
(exc. VAT)
£10.76
(inc. VAT)
Available to back order for despatch 24/04/2025
Units | Per unit |
---|---|
1 - 9 | £8.97 |
10 + | £7.82 |
- RS Stock No.:
- 193-543
- Mfr. Part No.:
- IXFH69N30P
- Brand:
- IXYS
Technical Reference
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 69 A |
Maximum Drain Source Voltage | 300 V |
Series | HiperFET, Polar |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 49 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 500 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 5.3mm |
Length | 16.26mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 156 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Height | 21.46mm |
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