STMicroelectronics STN Type N-Channel MOSFET, 1 A, 200 V Enhancement, 4-Pin SOT-223 STN4NF20L
- RS Stock No.:
- 151-425
- Mfr. Part No.:
- STN4NF20L
- Brand:
- STMicroelectronics
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Subtotal (1 tape of 20 units)*
£4.24
(exc. VAT)
£5.08
(inc. VAT)
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In Stock
- 3,200 unit(s) ready to ship
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Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | £0.212 | £4.24 |
| 200 - 480 | £0.202 | £4.04 |
| 500 - 980 | £0.186 | £3.72 |
| 1000 - 1980 | £0.172 | £3.44 |
| 2000 + | £0.165 | £3.30 |
*price indicative
- RS Stock No.:
- 151-425
- Mfr. Part No.:
- STN4NF20L
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | STN | |
| Package Type | SOT-223 | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series STN | ||
Package Type SOT-223 | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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