STMicroelectronics STN Type N-Channel MOSFET, 1 A, 200 V Enhancement, 4-Pin SOT-223 STN4NF20L
- RS Stock No.:
- 151-424
- Mfr. Part No.:
- STN4NF20L
- Brand:
- STMicroelectronics
Subtotal (1 reel of 4000 units)*
£848.00
(exc. VAT)
£1,016.00
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 20 April 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.212 | £848.00 |
*price indicative
- RS Stock No.:
- 151-424
- Mfr. Part No.:
- STN4NF20L
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-223 | |
| Series | STN | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.3W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-223 | ||
Series STN | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.3W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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