STMicroelectronics SuperMESH Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220FP STP6NK60ZFP
- RS Stock No.:
- 151-415
- Mfr. Part No.:
- STP6NK60ZFP
- Brand:
- STMicroelectronics
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£63.00
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£75.50
(inc. VAT)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 450 | £1.26 | £63.00 |
| 500 - 950 | £1.197 | £59.85 |
| 1000 + | £1.109 | £55.45 |
*price indicative
- RS Stock No.:
- 151-415
- Mfr. Part No.:
- STP6NK60ZFP
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FP | |
| Series | SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 30.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FP | ||
Series SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 30.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
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