STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin TO-220FP
- RS Stock No.:
- 151-433
- Distrelec Article No.:
- 304-37-473
- Mfr. Part No.:
- STF3NK80Z
- Brand:
- STMicroelectronics
Subtotal (1 pack of 10 units)*
£11.00
(exc. VAT)
£13.20
(inc. VAT)
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In Stock
- Plus 1,660 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £1.10 | £11.00 |
*price indicative
- RS Stock No.:
- 151-433
- Distrelec Article No.:
- 304-37-473
- Mfr. Part No.:
- STF3NK80Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SuperMESH | |
| Package Type | TO-220FP | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SuperMESH | ||
Package Type TO-220FP | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
Related links
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