STMicroelectronics SuperMESH N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220 STP6NK60Z
- RS Stock No.:
- 151-942
- Mfr. Part No.:
- STP6NK60Z
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£12.00
(exc. VAT)
£14.40
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 30 unit(s) ready to ship
- Plus 50 unit(s) shipping from 11 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.20 | £12.00 |
| 100 + | £1.156 | £11.56 |
*price indicative
- RS Stock No.:
- 151-942
- Mfr. Part No.:
- STP6NK60Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | SuperMESH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 28.9mm | |
| Length | 28.9mm | |
| Standards/Approvals | RoHS | |
| Width | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series SuperMESH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 28.9mm | ||
Length 28.9mm | ||
Standards/Approvals RoHS | ||
Width 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is obtained through an extreme optimization of well established strip based Power MESH layout. In addition to pushing on resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Related links
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP6NK60Z
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP STP6NK60ZFP
- STMicroelectronics SuperMESH N-Channel Zener-Protected SuperMESH MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- STMicroelectronics SuperMESH N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 STP20NK50Z
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4