STMicroelectronics SuperMESH Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220 STP6NK60Z
- RS Stock No.:
- 151-941
- Mfr. Part No.:
- STP6NK60Z
- Brand:
- STMicroelectronics
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
£43.55
(exc. VAT)
£52.25
(inc. VAT)
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In Stock
- Plus 50 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 450 | £0.871 | £43.55 |
| 500 - 950 | £0.827 | £41.35 |
| 1000 + | £0.766 | £38.30 |
*price indicative
- RS Stock No.:
- 151-941
- Mfr. Part No.:
- STP6NK60Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 28.9mm | |
| Length | 28.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 28.9mm | ||
Length 28.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is obtained through an extreme optimization of well established strip based Power MESH layout. In addition to pushing on resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
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