Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 796-5064P
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
323 In stock - FREE next working day delivery available
Added
Price Each (Supplied in a Tube)
£2.80
(exc. VAT)
£3.36
(inc. VAT)
| Units | Per unit |
| 10 - 49 | £2.80 |
| 50 - 124 | £2.73 |
| 125 - 249 | £2.71 |
| 250 + | £2.65 |
- RS Stock No.:
- 796-5064P
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 4.5 x 20mm |
| Maximum Operating Temperature | +175 °C |
- RS Stock No.:
- 796-5064P
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
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