- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
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Added
Price Each
£4.42
(exc. VAT)
£5.30
(inc. VAT)
Units | Per unit |
1 - 9 | £4.42 |
10 - 49 | £2.80 |
50 - 124 | £2.73 |
125 - 249 | £2.71 |
250 + | £2.65 |
- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 230 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.5 x 4.5 x 20mm |
Maximum Operating Temperature | +175 °C |
- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
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