- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
Available to back order for despatch 08/10/2024
Added
Price Each
£4.34
(exc. VAT)
£5.21
(inc. VAT)
Units | Per unit |
1 + | £4.34 |
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 230 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.5 x 4.5 x 20mm |
Maximum Operating Temperature | +175 °C |
- RS Stock No.:
- 796-5061
- Mfr. Part No.:
- GT50JR21
- Brand:
- Toshiba
Related links
- Toshiba GT30J121 IGBT 3-Pin TO-3P, Through Hole
- Toshiba GT40QR21 40 A 1200 V Through Hole
- Toshiba GT50JR22 IGBT 3-Pin TO-3P, Through Hole
- STMicroelectronics STGWT30H60DFB IGBT 3-Pin TO-3P, Through Hole
- STMicroelectronics STGWT60H65DFB IGBT 3-Pin TO-3P, Through Hole
- Fuji Electric 7MBP50VDA-060-50 3 Phase IGBT Module 25-Pin P 630, PCB Mount
- STMicroelectronics STGWT60V60DLF IGBT 3-Pin TO-3P, Through Hole
- STMicroelectronics STGWT30V60F IGBT 3-Pin TO-3P, Through Hole