Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole

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Subtotal (1 tube of 25 units)*

£95.50

(exc. VAT)

£114.50

(inc. VAT)

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  • 350 unit(s) ready to ship
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Per Tube*
25 +£3.82£95.50

*price indicative

RS Stock No.:
168-7768
Mfr. Part No.:
GT50JR22
Brand:
Toshiba
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Brand

Toshiba

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

230 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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