Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 891-2743
- Mfr. Part No.:
- GT40QR21,F(O
- Brand:
- Toshiba
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- RS Stock No.:
- 891-2743
- Mfr. Part No.:
- GT40QR21,F(O
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Maximum Continuous Collector Current | 40 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±25V | |
Maximum Power Dissipation | 230 W | |
Package Type | TO-3P | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Switching Speed | 2.5MHz | |
Transistor Configuration | Single | |
Dimensions | 15.5 x 4.5 x 20mm | |
Energy Rating | 0.29mJ | |
Maximum Operating Temperature | 175 °C | |
Gate Capacitance | 1500pF | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 2.5MHz | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Energy Rating 0.29mJ | ||
Maximum Operating Temperature 175 °C | ||
Gate Capacitance 1500pF | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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