Toshiba TK090Z65Z Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4 TK090Z65Z,S1F(O
- RS Stock No.:
- 206-9728
- Mfr. Part No.:
- TK090Z65Z,S1F(O
- Brand:
- Toshiba
Subtotal (1 unit)*
£9.75
(exc. VAT)
£11.70
(inc. VAT)
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In Stock
- 54 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £9.75 |
*price indicative
- RS Stock No.:
- 206-9728
- Mfr. Part No.:
- TK090Z65Z,S1F(O
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247-4 | |
| Series | TK090Z65Z | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.09 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247-4 | ||
Series TK090Z65Z | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.09 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.075 ?
Storage temperature -55 to 150°C
Storage temperature -55 to 150°C
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