Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S
- RS Stock No.:
- 206-9725
- Mfr. Part No.:
- TK090N65Z,S1F(S
- Brand:
- Toshiba
Subtotal (1 tube of 30 units)*
£139.95
(exc. VAT)
£167.94
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 180 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 + | £4.665 | £139.95 |
*price indicative
- RS Stock No.:
- 206-9725
- Mfr. Part No.:
- TK090N65Z,S1F(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 650 V | |
Series | TK090N65Z | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.09 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Series TK090N65Z | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.09 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.075 ?
Storage temperature -55 to 150°C
Storage temperature -55 to 150°C
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