STMicroelectronics STGWT30H60DFB IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 168-8792
- Mfr. Part No.:
- STGWT30H60DFB
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£61.26
(exc. VAT)
£73.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 30 unit(s) ready to ship
- Plus 999,999,960 unit(s) shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 + | £2.042 | £61.26 |
*price indicative
- RS Stock No.:
- 168-8792
- Mfr. Part No.:
- STGWT30H60DFB
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 60 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 260 W | |
Package Type | TO-3P | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 15.8 x 5 x 14.1mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 260 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5 x 14.1mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- KR
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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