STMicroelectronics STGFW30V60DF IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole

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Subtotal (1 tube of 30 units)*

£57.18

(exc. VAT)

£68.61

(inc. VAT)

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Last RS stock
  • Final 60 unit(s), ready to ship
Units
Per unit
Per Tube*
30 - 30£1.906£57.18
60 - 120£1.81£54.30
150 - 270£1.629£48.87
300 +£1.62£48.60

*price indicative

RS Stock No.:
168-7090
Mfr. Part No.:
STGFW30V60DF
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

58 W

Package Type

TO-3PF

Mounting Type

Through Hole

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.7 x 5.7 x 26.7mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
KR

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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