STMicroelectronics STGFW30V60DF IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 792-5779
- Mfr. Part No.:
- STGFW30V60DF
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 2 units)*
£5.85
(exc. VAT)
£7.02
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 60 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £2.925 | £5.85 |
| 10 - 18 | £2.78 | £5.56 |
| 20 - 48 | £2.505 | £5.01 |
| 50 - 98 | £2.25 | £4.50 |
| 100 + | £2.13 | £4.26 |
*price indicative
- RS Stock No.:
- 792-5779
- Mfr. Part No.:
- STGFW30V60DF
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 58 W | |
| Package Type | TO-3PF | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.7 x 5.7 x 26.7mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 58 W | ||
Package Type TO-3PF | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.7 x 5.7 x 26.7mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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