STMicroelectronics STGWT20H65FB IGBT, 40 A 650 V, 3-Pin TO, Through Hole
- RS Stock No.:
- 192-4655
- Mfr. Part No.:
- STGWT20H65FB
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£45.66
(exc. VAT)
£54.78
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 February 2026
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Units | Per unit | Per Tube* |
---|---|---|
30 - 90 | £1.522 | £45.66 |
120 - 240 | £1.481 | £44.43 |
270 - 480 | £1.442 | £43.26 |
510 - 990 | £1.405 | £42.15 |
1020 + | £1.37 | £41.10 |
*price indicative
- RS Stock No.:
- 192-4655
- Mfr. Part No.:
- STGWT20H65FB
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 40 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 168 W | |
Number of Transistors | 1 | |
Package Type | TO | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 15.8 x 5 x 20.1mm | |
Minimum Operating Temperature | -55 °C | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 168 W | ||
Number of Transistors 1 | ||
Package Type TO | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5 x 20.1mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature: TJ= 175 °C
High speed switching series
Minimized tail current
VCE(sat)= 1.55 V (typ.) @ IC= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package
High speed switching series
Minimized tail current
VCE(sat)= 1.55 V (typ.) @ IC= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package
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