STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 40 A 650 V, 3-Pin TO, Through Hole
- RS Stock No.:
- 192-4655
- Mfr. Part No.:
- STGWT20H65FB
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£46.20
(exc. VAT)
£55.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | £1.54 | £46.20 |
| 120 - 240 | £1.498 | £44.94 |
| 270 - 480 | £1.458 | £43.74 |
| 510 - 990 | £1.421 | £42.63 |
| 1020 + | £1.386 | £41.58 |
*price indicative
- RS Stock No.:
- 192-4655
- Mfr. Part No.:
- STGWT20H65FB
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | Trench Gate Field Stop IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 168W | |
| Package Type | TO | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | HB | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type Trench Gate Field Stop IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 168W | ||
Package Type TO | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series HB | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature: TJ= 175 °C
High speed switching series
Minimized tail current
VCE(sat)= 1.55 V (typ.) @ IC= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package
Related links
- STMicroelectronics STGWT20H65FB IGBT 3-Pin TO, Through Hole
- STMicroelectronics STGF20H65DFB2 IGBT 3-Pin TO-220FP
- STMicroelectronics STGWA40IH65DF IGBT 3-Pin TO-247
- STMicroelectronics STGWA20H65DFB2 IGBT 3-Pin TO-247
- STMicroelectronics STGW40H65DFB IGBT 3-Pin TO-247, Through Hole
- Infineon IGW40N65F5FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKWH40N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- onsemi FGA40N65SMD IGBT 3-Pin TO-3PN, Through Hole
