Infineon IGBT Module, 140 A 1200 V
- RS Stock No.:
- 244-5858
- Mfr. Part No.:
- FS100R12KE3BOSA1
- Brand:
- Infineon
Subtotal (1 tray of 10 units)*
£797.04
(exc. VAT)
£956.45
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 20 unit(s) shipping from 24 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 10 + | £79.704 | £797.04 |
*price indicative
- RS Stock No.:
- 244-5858
- Mfr. Part No.:
- FS100R12KE3BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 140A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 480W | |
| Number of Transistors | 6 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | FS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 140A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 480W | ||
Number of Transistors 6 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series FS | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 480 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Maximum collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA