Infineon FS100R12KE3BOSA1 IGBT Module, 140 A 1200 V
- RS Stock No.:
- 244-5861
- Mfr. Part No.:
- FS100R12KE3BOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£182.81
(exc. VAT)
£219.37
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 1 - 1 | £182.81 |
| 2 - 2 | £179.15 |
| 3 + | £161.25 |
*price indicative
- RS Stock No.:
- 244-5861
- Mfr. Part No.:
- FS100R12KE3BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 140 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 480 W | |
| Number of Transistors | 6 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 140 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 480 W | ||
Number of Transistors 6 | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 480 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Maximum collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Maximum collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
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