MPN

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

RS Stock No.:: 244-5822
Mfr. Part No.:: FF300R12KT4HOSA1
Brand:: Infineon

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V

Subtotal (1 tray of 10 units)*

£1,067.80

(exc. VAT)

£1,281.40

(inc. VAT)

FREE delivery for orders over £60.00

Temporarily out of stock

Shipping from 10 May 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tray*
10 +	£106.78	£1,067.80

*price indicative

RS Stock No.:: 244-5822
Mfr. Part No.:: FF300R12KT4HOSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current Ic	450A
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	2
	Maximum Power Dissipation Pd	1600W
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Operating Temperature	175°C
	Width	61.4mm
	Standards/Approvals	No
	Length	106.4mm
	Series	FF
	Automotive Standard	No

	Select all
	Brand Infineon
	Maximum Continuous Collector Current Ic 450A
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 2
	Maximum Power Dissipation Pd 1600W
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Operating Temperature 175°C
	Width 61.4mm
	Standards/Approvals No
	Length 106.4mm
	Series FF
	Automotive Standard No

Datasheet - FF300R12KT4HOSA1

Infineon Series FF IGBT Module, 1200V Collector-Emitter Voltage, 450A Collector Current - FF300R12KT4HOSA1

This IGBT module is a power semiconductor device designed to switch and control high-voltage DC circuits in industrial power systems. It combines two transistors in a single package to handle high current loads and operates across a wide temperature range suitable for demanding thermal environments.

Features and Benefits:

• 1200V blocking capability for high-voltage switching applications
• 450A continuous collector current to support heavy current demands
• 1600W maximum power dissipation for sustained high-power operation
• 2.15V low Vce(sat) for reduced conduction losses
• 20V maximum gate-emitter rating to define safe drive limits
• Operates up to 175°C for elevated-temperature installations

Applications

• Suitable for high-voltage motor drive systems
• Ideal for industrial inverters requiring high current
• Can be used for renewable-energy converter stages
• Used with power supplies needing Compact dual transistors
• Applicable in traction or utility power-electronics environments

What transistor configuration does it provide?

It contains two matched transistors in a single module allowing synchronous or complementary switching arrangements.

What environmental extremes can it withstand?

It is rated to function down to -40°C and up to 175°C for operation across wide temperature ranges.

How does the gate-emitter limitation affect drive circuitry?

The 20V gate-emitter limit defines the maximum allowable gate-drive voltage and determines required gate-drive protection and level-shifting design.

What electrical stress limits should designers observe?

Designers must account for a 1200V collector-emitter blocking limit and a 1600W package dissipation ceiling when planning thermal management.

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