Infineon FF1600R12IP7BOSA1 Half Bridge IGBT, 1.6 kA 1200 V, Screw Mount
- RS Stock No.:
- 349-361
- Mfr. Part No.:
- FF1600R12IP7BOSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£708.69
(exc. VAT)
£850.43
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3 unit(s) ready to ship
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Units | Per unit |
---|---|
1 + | £708.69 |
*price indicative
- RS Stock No.:
- 349-361
- Mfr. Part No.:
- FF1600R12IP7BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 1.6 kA | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 20 mW | |
Number of Transistors | 2 | |
Configuration | Half Bridge | |
Mounting Type | Screw Mount | |
Channel Type | N | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 1.6 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 2 1200 V 1600 A Dual IGBT Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode is designed for high power applications, offering exceptional performance in a compact and robust package. It delivers the highest power density, optimizing space while maintaining outstanding power handling capabilities. The module features best-in-class VCEsat, ensuring low saturation voltage for higher efficiency and reduced energy losses.
Increase in power density
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
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