Infineon FF2400R12IP7BPSA1, Type N-Channel Half Bridge IGBT, 2400 A 1200 V Module, Screw
- RS Stock No.:
- 349-362
- Mfr. Part No.:
- FF2400R12IP7BPSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£849.49
(exc. VAT)
£1,019.39
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 2 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £849.49 |
*price indicative
- RS Stock No.:
- 349-362
- Mfr. Part No.:
- FF2400R12IP7BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 2400A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 2 | |
| Configuration | Half Bridge | |
| Package Type | Module | |
| Mount Type | Screw | |
| Channel Type | Type N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Height | 38.25mm | |
| Length | 247mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 2400A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
Package Type Module | ||
Mount Type Screw | ||
Channel Type Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Height 38.25mm | ||
Length 247mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon PrimePACK 3+ Dual IGBT Module with TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, and NTC is designed for ultra-high power applications, providing superior performance and efficiency. It offers the highest power density, optimizing both space and power handling for demanding industrial uses. The module features best-in-class VCEsat, delivering low saturation voltage to maximize efficiency and minimize energy losses.
Increase in power density
Less cooling effort for same output power
High power density enables frame jump
Avoidance of paralleling of IGBT modules
Standardized Housing
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