Infineon BFP410H6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 4.5 V, 4-Pin SOT-343
- RS Stock No.:
- 273-7297
- Mfr. Part No.:
- BFP410H6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£552.00
(exc. VAT)
£663.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 February 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.184 | £552.00 |
*price indicative
- RS Stock No.:
- 273-7297
- Mfr. Part No.:
- BFP410H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 25GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 25GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a low noise device based on a grounded emitter that is part of Infineon established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for high frequency oscillators. It remains cost competitive without compromising on ease of use.
High gain
Minimum noise figure
Suitable for broadband low noise amplifiers
LNAs for sub 1 GHz ISM band applications
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