Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 3.25 V, 4-Pin SOT-343
- RS Stock No.:
- 170-2366
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 170-2366
- Mfr. Part No.:
- BFP842ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface Mount | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Emitter Base Voltage VEBO | 4.1V | |
| Maximum Power Dissipation Pd | 120mW | |
| Maximum Transition Frequency ft | 57GHz | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 2.1mm | |
| Series | BFP842ESD | |
| Height | 1.3mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.25V | ||
Package Type SOT-343 | ||
Mount Type Surface Mount | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Emitter Base Voltage VEBO 4.1V | ||
Maximum Power Dissipation Pd 120mW | ||
Maximum Transition Frequency ft 57GHz | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 2.1mm | ||
Series BFP842ESD | ||
Height 1.3mm | ||
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
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