Infineon BFP650H6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 13 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1446
- Distrelec Article No.:
- 304-40-489
- Mfr. Part No.:
- BFP650H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£6.025
(exc. VAT)
£7.225
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 2,850 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.241 | £6.03 |
| 125 - 225 | £0.18 | £4.50 |
| 250 - 600 | £0.175 | £4.38 |
| 625 - 1225 | £0.171 | £4.28 |
| 1250 + | £0.166 | £4.15 |
*price indicative
- RS Stock No.:
- 259-1446
- Distrelec Article No.:
- 304-40-489
- Mfr. Part No.:
- BFP650H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon high linearity low noise SiGe:C NPN RF transistor, It is easy to use Pb-free (RoHS compliant) standard package with visible leads.
Driver amplifier
ISM bands 434 and 868 MHz
1.9 GHz Cordless phones
CATV LNA
Transmitter driver amplifier
Output stage LNA for Active antennas
Related links
- Infineon RF Bipolar Transistor 13 V, 4-Pin TSFP-4-1
- Infineon BFP720FH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 13 V, 4-Pin TSFP-4-1
- Infineon BFP520H6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 7.5 V, 4-Pin TSFP-4-1
- Infineon BFP420FH6327XTSA1 RF Bipolar Transistor 4.5 V, 4-Pin TSFP-4-1
- Infineon RF Bipolar Transistor 10 V, 4-Pin TSFP-4-1
- Infineon BFP740H6327XTSA1 RF Bipolar Transistor 4.2 V, 4-Pin TSFP-4-1