Infineon BFP196E6327HTSA1 Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143
- RS Stock No.:
- 258-7695
- Distrelec Article No.:
- 304-40-483
- Mfr. Part No.:
- BFP196E6327HTSA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 25 units)*
£2.425
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£2.90
(inc. VAT)
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In Stock
- 11,325 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.097 | £2.43 |
| 250 - 600 | £0.092 | £2.30 |
| 625 - 1225 | £0.078 | £1.95 |
| 1250 - 2475 | £0.076 | £1.90 |
| 2500 + | £0.074 | £1.85 |
*price indicative
- RS Stock No.:
- 258-7695
- Distrelec Article No.:
- 304-40-483
- Mfr. Part No.:
- BFP196E6327HTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Power Dissipation Pd | 700mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Length | 2.9mm | |
| Series | BFP196 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 7.5GHz | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Power Dissipation Pd 700mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Length 2.9mm | ||
Series BFP196 | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. This transistor is used for LNA in RF front end and wireless communications.
Power amplifier for DECT and PCN systems
Pb free RoHS compliant package
Related links
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