MOSFETs - Ixys
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    Ixys MOSFETs

    363 Products showing for Ixys MOSFETs

    IXYS
    N
    20 A
    500 V
    300 mΩ
    TO-247
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    380 W
    -
    Single
    16.26mm
    +150 °C
    1
    Si
    36 nC @ 10 V
    5.3mm
    IXYS
    N
    82 A
    600 V
    75 mΩ
    PLUS264
    HiperFET, Q3-Class
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    6.5V
    -
    1.56 kW
    -
    Single
    20.29mm
    +150 °C
    1
    Si
    275 nC @ 10 V
    5.31mm
    IXYS
    N
    7 A
    800 V
    1.44 Ω
    TO-220
    HiperFET, Polar
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    200 W
    -
    Single
    10.66mm
    +150 °C
    1
    Si
    32 nC @ 10 V
    4.83mm
    IXYS
    N
    4 A
    650 V
    550 mΩ
    TO-220F
    X2-Class
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    3V
    32 W
    -
    Single
    10.36mm
    +150 °C
    1
    Si
    12 nC @ 10 V
    16.07mm
    IXYS
    N
    74 A
    200 V
    34 mΩ
    TO-247
    HiperFET, Polar
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5V
    -
    480 W
    -
    Single
    16.26mm
    +175 °C
    1
    Si
    107 nC @ 10 V
    5.3mm
    IXYS
    N
    60 A
    500 V
    100 mΩ
    TO-3PN
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    1.04 kW
    -
    Single
    15.8mm
    +150 °C
    1
    Si
    96 nC @ 10 V
    4.9mm
    IXYS
    N
    26 A
    500 V
    240 mΩ
    TO-3PN
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    500 W
    -
    Single
    15.8mm
    +150 °C
    1
    Si
    42 nC @ 10 V
    4.9mm
    IXYS
    N
    22 A
    600 V
    360 mΩ
    TO-220AB
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    500 W
    -
    Single
    10.66mm
    +150 °C
    1
    Si
    38 nC @ 10 V
    4.83mm
    IXYS
    N
    7 A
    800 V
    1.44 Ω
    TO-220
    HiperFET, Polar
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    200 W
    -
    Single
    10.66mm
    +150 °C
    1
    Si
    32 nC @ 10 V
    4.83mm
    IXYS
    N
    82 A
    600 V
    75 mΩ
    PLUS264
    HiperFET, Q3-Class
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    6.5V
    -
    1.56 kW
    -
    Single
    20.29mm
    +150 °C
    1
    Si
    275 nC @ 10 V
    5.31mm
    IXYS
    N
    22 A
    600 V
    360 mΩ
    TO-220AB
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    500 W
    -
    Single
    10.66mm
    +150 °C
    1
    Si
    38 nC @ 10 V
    4.83mm
    IXYS
    N
    120 A
    150 V
    16 mΩ
    TO-247AD
    HiperFET, Polar
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5V
    -
    600 W
    -
    Single
    16.26mm
    +175 °C
    1
    Si
    150 nC @ 10 V
    5.3mm
    IXYS
    N
    120 A
    200 V
    22 mΩ
    TO-247
    HiperFET, Polar
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5V
    -
    714 W
    -
    Single
    16.26mm
    +175 °C
    1
    Si
    152 nC @ 10 V
    5.3mm
    IXYS
    N
    18 A
    1000 V
    490 mΩ
    ISOPLUS247
    HiperFET, Q3-Class
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    6.5V
    -
    500 W
    -
    Single
    16.13mm
    +150 °C
    1
    Si
    140 nC @ 10 V
    5.21mm
    IXYS
    N
    36 A
    500 V
    170 mΩ
    TO-247AD
    HiperFET, Polar
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    540 W
    -
    Single
    16.26mm
    +150 °C
    1
    Si
    93 nC @ 10 V
    5.3mm
    IXYS
    N
    45 A
    500 V
    94 mΩ
    ISOPLUS247
    HiperFET, Q3-Class
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    6.5V
    -
    500 W
    -
    Single
    16.13mm
    +150 °C
    1
    Si
    145 nC @ 10 V
    5.21mm
    IXYS
    N
    26 A
    500 V
    240 mΩ
    TO-247
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    500 W
    -
    Single
    16.26mm
    +150 °C
    1
    Si
    42 nC @ 10 V
    5.3mm
    IXYS
    N
    26 A
    500 V
    240 mΩ
    TO-247
    HiperFET, Polar3
    Through Hole
    3
    -30 V, +30 V
    Enhancement
    5V
    -
    500 W
    -
    Single
    16.26mm
    +150 °C
    1
    Si
    42 nC @ 10 V
    5.3mm
    IXYS
    N
    150 A
    300 V
    19 mΩ
    TO-264
    HiperFET, Polar3
    Through Hole
    3
    -20 V, +20 V
    Enhancement
    5V
    -
    1.3 kW
    -
    Single
    19.96mm
    +150 °C
    1
    Si
    197 nC @ 10 V
    5.13mm
    IXYS
    N
    80 A
    250 V
    16 mΩ
    TO-247
    HiperFET
    Through Hole
    3
    ±20 V
    Enhancement
    4.5V
    2.5V
    390 W
    -
    Single
    16.24mm
    +150 °C
    1
    -
    83 @ 10 V nC
    5.3mm
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