IXYS Polar HiPerFET N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

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£20.82

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£24.98

(inc. VAT)

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  • 52 unit(s) ready to ship
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1 - 1£20.82
2 - 4£18.72
5 - 9£17.76
10 - 19£16.01
20 +£15.61

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RS Stock No.:
125-8040
Mfr. Part No.:
IXFN200N10P
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

100 V

Series

Polar HiPerFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

680 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

235 nC @ 10 V

Length

38.23mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

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