IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227 IXFN200N10P

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£24.05

(exc. VAT)

£28.86

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 89 unit(s) ready to ship
  • Plus 6 unit(s) ready to ship from another location
  • Plus 676 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£24.05
2 - 4£21.62
5 - 9£20.51
10 - 19£18.40
20 +£17.94

*price indicative

RS Stock No.:
125-8040
Mfr. Part No.:
IXFN200N10P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

Polar HiPerFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

680W

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

235nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

38.23mm

Width

25.07 mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links