IXYS HiperFET, Q3-Class N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

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Subtotal 10 units (supplied in a tube)*

£107.40

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£128.90

(inc. VAT)

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10 - 19£10.74
20 - 49£10.27
50 - 249£9.92
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Packaging Options:
RS Stock No.:
801-1503P
Mfr. Part No.:
IXFX64N50Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

500 V

Package Type

PLUS247

Series

HiperFET, Q3-Class

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

1 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

16.13mm

Number of Elements per Chip

1

Width

5.21mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

145 nC @ 10 V

Transistor Material

Si

Height

21.34mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS