JFETs

JFETs A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.What does JFET stand for? JFET stands for junction field-effect transistorN-Channel JFET ConstructionThe name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.P-Channel JFET ConstructionThe name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.Features and Benefits High input impedance Voltage controlled device High degree of isolation between the input and the output Less noiseWhat are they also known as? JUGFETWhat are JFET transistors used for? JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.What is the difference between a JFET & BJT (Bipolar Junction Transistor)? The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.What is doping of semiconductors? Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

...
Read more Read less

Filters

Viewing 21 - 40 of 98 products
Results per page
Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 122-0136
Mfr. Part No.MMBFJ310LT3G
£0.08
Each (On a Reel of 10000)
Units
N 24 → 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 773-7813
Mfr. Part No.MMBFJ310LT3G
£0.245
Each (In a Pack of 10)
Units
N 24 → 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 625-5745
Mfr. Part No.MMBFJ310LT1G
£0.328
Each (In a Pack of 5)
Units
N 24 → 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 177-5508
Mfr. Part No.2N4392CSM
BrandSemelab
£32.813
Each (In a Tray of 100)
Units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS Stock No. 738-7607
Mfr. Part No.2N4392CSM
BrandSemelab
£32.26
Each
Units
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS Stock No. 166-1831
Mfr. Part No.MMBFJ113
£0.06
Each (On a Reel of 3000)
Units
N min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 761-4524
Mfr. Part No.MMBFJ113
£0.228
Each (In a Pack of 25)
Units
N min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS Stock No. 760-3126
Mfr. Part No.2SK209-Y(TE85L,F)
BrandToshiba
£0.296
Each (In a Pack of 10)
Units
N 1.2 → 3.0mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 773-7816
Mfr. Part No.MMBFJ177LT1G
£0.256
Each (In a Pack of 10)
Units
P 1.5 → 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 166-2319
Mfr. Part No.BSR58
£0.057
Each (On a Reel of 3000)
Units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 163-0963
Mfr. Part No.MMBFJ177LT1G
£0.088
Each (On a Reel of 3000)
Units
P 1.5 → 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 163-0037
Mfr. Part No.MMBFJ175LT1G
£0.088
Each (On a Reel of 3000)
Units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 773-7819
Mfr. Part No.MMBFJ309LT1G
£0.256
Each (In a Pack of 10)
Units
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 163-0964
Mfr. Part No.MMBFJ309LT1G
£0.091
Each (On a Reel of 3000)
Units
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 864-7840
Mfr. Part No.MMBFJ175LT1G
£0.256
Each (In a Pack of 25)
Units
P -7 → -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11 pF @ 0 V 11 pF @ -10 V 3.04 x 1.4 x 1.01mm
RS Stock No. 807-5201
Mfr. Part No.BSR58
£0.096
Each (In a Pack of 100)
Units
N 8 → 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS Stock No. 626-2282
Mfr. Part No.BF510,215
BrandNXP
£0.145
Each (In a Pack of 10)
Units
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 179-1061
Mfr. Part No.PMBFJ309,215
BrandNXP
£0.095
Each (On a Reel of 3000)
Units
N 12 → 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 163-2019
Mfr. Part No.2SK2394-7-TB-E
£0.132
Each (On a Reel of 3000)
Units
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5155
Mfr. Part No.2SK2394-7-TB-E
£0.321
Each (In a Pack of 25)
Units
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
Related Products
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. N-channel JFET, ON Semiconductor. JFET Transistors.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. N-channel JFET, Fairchild Semiconductor. JFET Transistors.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. N-channel JFET, NXP. JFET Transistors.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. N-channel JFET, Fairchild Semiconductor. JFET Transistors.