onsemi 2SK932-23-TB-E N-Channel JFET, 15 V, Idss 10 to 17mA, 3-Pin CP
- RS Stock No.:
- 792-5173
- Mfr. Part No.:
- 2SK932-23-TB-E
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 25 units)*
£7.65
(exc. VAT)
£9.175
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 275 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | £0.306 | £7.65 |
| 100 - 225 | £0.264 | £6.60 |
| 250 - 475 | £0.228 | £5.70 |
| 500 - 975 | £0.201 | £5.03 |
| 1000 + | £0.183 | £4.58 |
*price indicative
- RS Stock No.:
- 792-5173
- Mfr. Part No.:
- 2SK932-23-TB-E
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 10 to 17mA | |
| Maximum Drain Source Voltage | 15 V | |
| Maximum Drain Gate Voltage | -15V | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | CP | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 10pF | |
| Source Gate On-Capacitance | 3pF | |
| Dimensions | 2.9 x 1.5 x 1.1mm | |
| Width | 1.5mm | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 10 to 17mA | ||
Maximum Drain Source Voltage 15 V | ||
Maximum Drain Gate Voltage -15V | ||
Transistor Configuration Single | ||
Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type CP | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 10pF | ||
Source Gate On-Capacitance 3pF | ||
Dimensions 2.9 x 1.5 x 1.1mm | ||
Width 1.5mm | ||
Height 1.1mm | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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