onsemi 2SK3557-6-TB-E, Single Type N-Channel JFET-Channel JFET, 15 V 10 to 20 mA, 3-Pin CP
- RS Stock No.:
- 792-5164
- Mfr. Part No.:
- 2SK3557-6-TB-E
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
£7.35
(exc. VAT)
£8.825
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 1,075 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | £0.294 | £7.35 |
| 100 - 225 | £0.253 | £6.33 |
| 250 - 475 | £0.22 | £5.50 |
| 500 - 975 | £0.193 | £4.83 |
| 1000 + | £0.176 | £4.40 |
*price indicative
- RS Stock No.:
- 792-5164
- Mfr. Part No.:
- 2SK3557-6-TB-E
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Sub Type | JFET | |
| Product Type | JFET | |
| Maximum Drain Source Voltage Vds | 15V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | CP | |
| Drain Source Current Ids | 10 to 20 mA | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1.1mm | |
| Series | 2SK3557 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Sub Type JFET | ||
Product Type JFET | ||
Maximum Drain Source Voltage Vds 15V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type CP | ||
Drain Source Current Ids 10 to 20 mA | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1.1mm | ||
Series 2SK3557 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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