onsemi J112 N-Channel JFET, Idss min. 5mA, 3-Pin TO-92
- RS Stock No.:
- 806-1757P
- Mfr. Part No.:
- J112
- Brand:
- onsemi
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Subtotal 500 units (supplied on a reel)*
£121.50
(exc. VAT)
£146.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 9,800 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 500 + | £0.243 |
*price indicative
- RS Stock No.:
- 806-1757P
- Mfr. Part No.:
- J112
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | min. 5mA | |
| Maximum Gate Source Voltage | -35 V | |
| Maximum Drain Gate Voltage | 35V | |
| Transistor Configuration | Single | |
| Configuration | Single | |
| Maximum Drain Source Resistance | 50 Ω | |
| Mounting Type | Through Hole | |
| Package Type | TO-92 | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 28pF | |
| Source Gate On-Capacitance | 28pF | |
| Dimensions | 5.2 x 4.19 x 5.33mm | |
| Width | 4.19mm | |
| Height | 5.33mm | |
| Minimum Operating Temperature | -55 °C | |
| Length | 5.2mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current min. 5mA | ||
Maximum Gate Source Voltage -35 V | ||
Maximum Drain Gate Voltage 35V | ||
Transistor Configuration Single | ||
Configuration Single | ||
Maximum Drain Source Resistance 50 Ω | ||
Mounting Type Through Hole | ||
Package Type TO-92 | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 28pF | ||
Source Gate On-Capacitance 28pF | ||
Dimensions 5.2 x 4.19 x 5.33mm | ||
Width 4.19mm | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Length 5.2mm | ||
Maximum Operating Temperature +150 °C | ||
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.